Design Kits and Libraries for SCMOS-series and BiCMOS2SC
Supported tools
MHS’s Foundry customers benefit
from professional Design Kit tools
for each of the proposed process technologies. These tools aim at
helping the customer to design a
complex mixed-signal IC product
quickly and safely.
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SCMOS3EE, SCMOS3E, SCMOS3RT |
BiCMOS2SC |
| Digital Synthesis |
SYNOPSIS ® Design Compiler
CADENCE ® AMBIT SPR
CADENCE ® RTL Compiler
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| Digital Netlist Simulation |
CADENCE ® LVD / NCSIM VHDL
Vital & Verilog
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| Digital Place & Route |
CADENCE ® Silicon Ensemble
CADENCE ® VDIO
CADENCE ® Virtuoso Custom Placer
CADENCE ® Chip Assembly Router
TANNER EDA ® L-EDIT |
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| Digital / Analog Simulations |
CADENCE ® Spectre-Verilog
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| Digital / Analog Front End / Schematic Entry |
CADENCE ® Composer
TANNER EDA ® S-EDIT |
CADENCE ® Composer |
| Analog Front End Simulations |
CADENCE ® Spectre
SYNOPSIS ® HSPICE
MENTOR Graphics ® ELDO
TANNER EDA ® T-SPICE |
CADENCE ® Spectre
SYNOPSIS ® HSPICE
MENTOR Graphics ® ELDO |
| Full Custom Layout |
CADENCE ® Virtuoso
TANNER EDA ® L-EDIT |
CADENCE ® Virtuoso |
| DRC |
CADENCE ® Diva
MENTOR Graphics ® Calibre
TANNER EDA ® L-EDIT / HiPer Verify |
CADENCE ® Diva |
| LVS / Extract |
CADENCE ® Diva
TANNER EDA ® L-EDIT / HiPer Verify
MENTOR Graphics
® Calibre |
CADENCE ® Diva |
Mixed-signal and design flow example
Device characterization and modeling
Within the Design Kit, the Electrical Design Rule document summarizes the device parameter specifications and limits.
Our Expert Characterization team has extensively worked to enhance the quality and contents of the device models, in order to cope as closely as possible to the measurements and to the process variations.
Low Voltage CMOS devices are modeled using BSIM3V3 and EKV models (EKV modeling performance is better for sub-threshold characteristics), while Bipolar devices are modeled using a Gummel-Pool model.
Dedicated model optimization has been conducted on specific Lateral Drain MOS High Voltage transistors, to take into account the SOA (Safe Operating Area) in the simulations.
A dedicated documentation is published within the Design Kit to graphically compare for each device the modeled and the experimental curves.
The following environmental behaviors have been included in the models (*):
 Parameter Voltage dependence
 Parameter Temperature dependence
Matching of the first order parameters
1/f Noise
RF behavior
Device dimension parameter dependence
Device limitations (BV, SOA)
First order parameter statistical distribution (Corner cases, Montecarlo)
*) Please note that this list depends on the given technology and device
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