Description
HJC is a High Speed Complementary bipolar process, providing excellent noise isolation and a compact design and is capable of supporting designs up to 5V. It is a double polysilicon double or triple metal (2P/2-3M) trench isolated complementary bipolar process for RF applications in the range 900 MHz to 3.5 GHz.
Devices portfolio includes:
 NPN@28 GHz, VPNP@18 GHz bipolar transitors
High- and low-value polysilicon resistors
High-value MIS capacitors
RF MIM capacitors
Schottky and Zener diodes
Inductors & Varactors |
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H-Series
Click on one of the technologies to get more information |
Key features
NPN@28 GHz, Bvceo>3V
VPNP@18GHz, LPNP@350MHz
Emitter width only 0.6µm
Varactor diodes - 0.75 fF/μm²
Polysilicon resistors - 110/155/1400 Ohms/sq
Schottky Diodes - Vf=0.5 V
MIM capacitors - 0.5 fF/μm² (optional)
MIS capacitors 2.75 fF/μm² (optional) |
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Applications
Current mode circuits
TV Tuners
Fiber-optic networks
Wireless LANs
High Speed logic and low power mixed signal
Low power amplifiers
Drivers
Prescalars >13Ghz |