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BiCMOS2SC

Description

BiCMOS2SC is a 1.0µm 12V High Speed Analog Complementary BiCMOS process.

It is a high voltage single poly double metal LOCOS isolated process suitable for RF applications.

Device portfolio includes:
12V NPN@6 GHz and vertical PNP@2.8 GHz Bipolar,
5V NMOS and PMOS transistors
N and PLDMOS transistors
Diffusion and polysilicon resistors,
Zener and rectifier diodes

 

Key features

NPN@6 GHz, BVceo>12V
VPNP@2.8 GHz, BVceo>>12V
1.2 µm min. gate length CMOS
5V NMOS, Vt= 0.8V
5V PMOS, Vt=-0.9V

40V NLDMOS, Rdson=0.35 Ohm.sq mm
60V PLDMOS, Rdson=0.85 Ohm.sq mm
Diffusion resistors – 47/355/1100 Ohms/sq
Polysilicon resistors - 40 Ohms/sq
Zener diode @5.5 V

     

Applications

Laser Drivers
Encoders
Infrared Detectors
Data Transceiver

   
     

Technology Information Download

BiCMOS2SC, SCMOS3E, SCMOS3EE and SCMOS3RT Infosheet

For technology choice advice or for design kits and rules access, please contact your regional sales