Description
BW is a 0.8µm 20V High Speed Analog BiCMOS process.
It is a high voltage LOCOS isolated process suitable for very high linearity applications.
Device portfolio includes:
 NPN@4 GHz and lateral PNP@80 MHz Bipolar,
Fully isolated NMOS and PMOS transistors
Full set of resistors diodes and capacitors |
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Key features
NPN@5 GHz, BVceo>20V
LPNP@80 MHz (Ic=0.1 mA, Vce=2 V), BVceo>20V
0.8µm min. gate length CMOS
Fully isolated NMOS, Vt= 0.8V
Fully isolated PMOS, Vt=-0.9V
CMOS gates integration about 2K/sq mm
Diffusion resistors – 70/550 Ohms/sq
Polysilicon resistors - 25/2000 Ohms/sq
Schottky Diodes - Vf=0.5 V
Zero TC Zener diode @5.3 V
MIS capacitors – 0.9 fF/μm²@20 V
Thick last metal option |