Description
HSC is 36V High speed complementary bipolar process on SOI with compact transistor design and optimized for low noise.
It is a double polysilicon, double or triple metal, trench isolated, complementary SOI bipolar process with enhanced voltage capability options for operations higher than 36 V. It is suitable for +/-15V designs
Device portfolio includes:
 NPN@3 GHz and vertical PNP@3 GHz Bipolar
Low and high value resistors
High-value MIS capacitors, RF MIM capacitor
Pt Schottky diodes, inductors and varactors |
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Key features
NPN@3 Ghz, BVceo>36V
Emitter width only 0.6µm
VPNP@3 Ghz (Ic=0.1 mA, Vce=2 V), BVceo>36V
Varactor diodes - 0.45 fF/μm²
Polysilicon resistors - 110/155/1400 Ohms/sq
Pt Schottky Diodes - Vf=0.5 V@10 mA
MIM capacitors - 0.5 fF/μm² (optional)
MIS capacitors – 0.5 fF/μm² @ ??V (optional)
Two level or three level metal option |
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Applications
High speed Video amplifiers
ADSL Drivers
High speed, performance amplifiers
Laser Diode Drivers for DVD
Cable Modems |