Description
HSA is 12V High speed complementary bipolar process on SOI with compact transistor design and optimized for low noise.
It is a double polysilicon, double or triple metal, trench isolated, complementary SOI bipolar process.
Device portfolio includes:
 NPN@9 GHz and vertical PNP@8 GHz Bipolar
Low and high value resistors
High-value MIS capacitors, RF MIM capacitor
Pt Schottky diodes, inductors and varactors |
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H-Series
Click on one of the technologies to get more information |
Key features
NPN@9 Ghz, BVceo>12V
Emitter width only 0.6µm
VPNP@8 Ghz (Ic=0.1 mA, Vce=2 V), BVceo>12V
Varactor diodes - 0.45 fF/μm²
Polysilicon resistors - 110/155/1400 Ohms/sq
Pt Schottky Diodes - Vf=0.5 V@10 mA
MIM capacitors - 0.5 fF/μm² (optional)
MIS capacitors - 1.0 fF/μm² @20V (optional)
Two level or three level metal option |
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Applications
High Speed low power, linear precision amplifiers
Video amplifiers and filters
ATE pin driver electronics
Line Drivers
Medical Instrumentation |