Description
HJW is a 12V High linearity complementary bipolar process with compact and well isolated design.
HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvceo > 12V, suitable for very high linearity applications.
Device portfolio includes:
 NPN@6 GHz and lateral PNP@6 GHz Bipolar
Low and high volume resistors
High-value MIS capacitors, MIM capacitor
Schottky diodes, inductors and varactors |
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H-Series
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Key features
NPN@6 Ghz, BVceo>12V
Emitter width only 0.6µm
PNP@6 Ghz (Ic=0.1 mA, Vce=2 V), BVceo>12V
Varactor diodes - 0.45 fF/μm²
Polysilicon resistors - 110/155/1400 Ohms/sq
Schottky Diodes - Vf=0.5 V
MIM capacitors - 0.5 fF/μm² (optional)
MIS capacitors - 1.0 fF/μm² (optional)
Two level or three level metal option |
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Applications
High Speed low power, linear, precision amplifiers
Video amplifiers and filters
ATE
High Speed low power mixed signal
ATE pin driver electronics
Line Drivers
Medical Instrumentation |