Description
HJB is a High Speed Complementary bipolar process providing excellent noise isolation and a compact design and is capable of supporting designs up to 7V. It is a double-polysilicon double or triple metal (2P/2-3M) trench isolated complementary bipolar process for RF application in the range 900MHz to 2.4GHz.
Device portfolio includes:
 High- and low-value polysilicon resistors
High-value MIS capacitors
RF MIM capacitors
Schottky and Zener diodes
Inductors & Varactors |
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Key features
NPN@19 GHz, Bvceo>4.5V
Emitter width only 0.6µm
Vertical PNP@15 GHz, Bvceo>4.5V fully isolated
Lateral PNP@350 MHz
Varactor diodes - 0.5 fF/μm²
Polysilicon resistors - 110/155/1400 Ohms/sq
Schottky Diodes - Vf=0.5 V
MIM capacitors - 0.5 fF/μm² (optional)
MIS capacitors - 2.75 fF/μm² |
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Applications
High Speed low-power amplifiers
TV Tuners
Frequency Scalars
High Speed or Low Power Mixed Signal
High speed laser Drivers |