Description
MHS’s SCMOS3RT is a double poly triple metal radiation tolerant 5V 0.5 μm mixed-signal CMOS technology with different process options, including analog devices, and two levels of radiation tolerance (60 krad or 300 krad @VCC=5.5V, total dose tolerance is higher for lower supply voltages). This mixed-signal process offers the UNIQUE opportunity for designing full-custom complex radiation-hardened ICs, with the support of a comprehensive Design Kit.
The technology processes are based on thin-epitaxial layer silicon substrates, and include specific steps for radiation tolerance enhancement. The 60 krad option is fully topological rules compatible with non-RT technology (SCMOS3E) with the same component integration.The 300 krad option offers a specific NMOS transistor with a small impact in terms of integration. IC Products based on MHS’s SCMOS3RT processes have shown SEL tolerance higher than 70 MeV/mg/cm2.
MHS Electronics is offering mature radiation tolerant technologies (>8 years in production status), initially developed with the expert support of the CNES (French National Space Center). The performance and reliability of these technologies are time-proven as numerous Integrated Circuits have been produced for different customers and applications in the High Reliability markets (Satellites, Shuttles, Scientific Equipment). |
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Key features
 Thin-epitaxy substrate
Poly Buffer LOCOS isolation
Retrograded wells, N+ and P+ polySi gates
Silicided Gates and Diffusions
NMOS 60krad option: L=0.5µm, Vt = 0.67V, IDSN=580µA/µm
NMOS 300krad option: L=0.5µm, Vt = 0.67V, IDSN=620µA/µm
PMOS : L=0.5µm, Vt= -0.65V, IDSP=350µA/µm
Interpoly linear capacitor (1.25fF/µm²)
Poly resistor (60 ohms/sq)
High resistive poly resistor (1Kohms/sq)
Applications
Sensor controllers
Communication systems
Calculators
Space Scientific Equipments |