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Process selection guide |
 Bipolar and BiCMOS technologies
Specialty CMOS technologies |
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| Bipolar and BiCMOS technologies |
MHS Electronics manufactures a range of high performance bipolar processes ranging from low cost diffused isolation processes to double-poly trench isolated processes with fTs up to 30 GHz.
The low-complexity W-series has been used for IF applications up to 500 MHz and digital designs up to 3 GHz. With up to 32 V capability it is ideally suited to power management applications.
The leading edge double polysilicon H-series has a full complement of RF compatible passive components - low capacitance resistors, high quality capacitors and inductors. These processes are ideally suited to analog applications and enables high power outputs, low voltage, low noise integrated solutions for ultra high frequency performance analog applications of up to or higher than 2.5 GHz. The process family includes HSA, a complementary SOI technology, operating at a minimum BVceo of 12V.
B-series includes high performance BiCMOS processes offering solutions for RF, Performance Analog, and Power manage
ment applications
These technologies are available with full design support kits incorporating advanced component models. |
| Process |
Description |
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| Bipolar HJC |
Complementary 30/18 GHz NPN/PNP ; BVceo > 3V |
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| Bipolar HJB |
Complementary 19/15 GHz NPN/PNP ; BVceo> 4.5V |
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| Bipolar HJV |
Complementary 9/8 GHz NPN/PNP ; BVceo> 12V |
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| Bipolar HJW |
Complementary 6/6 GHz NPN/PNP ; 5.6V BVebo.
Bvceo > 12V |
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| Bipolar HSA |
Complementary 8/9 GHz NPN/PNP on insulator
BVceo > 12V, (15V typical) |
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| Bipolar HGC |
22 GHz NPN. BVceo > 4.5V including 350 MHz PNP |
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| Bipolar WPC |
7 GHz NPN Bvceo > 6 V including 100 MHz PNP |
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| Bipolar WPX |
4.5 GHz, NPN Bvceo > 18V including 50 MHz PNP |
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| Bipolar WXC |
1.5 GHz, NPN Bvceo > 32V including 30 MHz PNP |
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| BiCMOS BW |
20V Bipolar based modular BiCMOS with Lg 0.8µm, Vth 0.8V CMOS ; 4 GHz NPN, Bvceo > 20V |
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BiCMOS
BiCMOS2SC |
12V Complementary bipolar BiCMOS; 6 GHz NPN 2.8 GHz PNP ; Lg 1.2µm, Vth 0.8V CMOS ; >40V HV CMOS |
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| Specialty CMOS technologies |
MHS Electronics manufactures a range of specialty CMOS processes from 0.8µm down to 0.5µm and included in the SCMOS-series.
The leading edge double or triple well 0.5µm 5V-CMOS SCMOS3EE has a full complement of High Voltage MOS transistors compatible up to 50V, a set of isolated LV and HV devices including Bipolar transistors, a set of optimized passive components and an embedded EEPROM capability. This process is then ideally suited to integrated solutions for performance mixed-analog applications, such as RFID, Sensor Control and Power Management. Medium term on-going development aims to embed MEMS devices for heterogeneous system integration.
The lower-complexity 0.8µm 5V-CMOS SCMOS1A and 0.5µm 5V-CMOS SCMOS3E have been used for Digital and Mixed-Signal applications such as Microcontroller and Sensor Control.
The SCMOS3E Mixed-signal devices have been characterized, modelized, and qualified at Very Low Temperature (89K), as well as at High Temperature (200°C).
The SCMOS3RT represents a unique offering of Radiation Tolerant CMOS technology for Full-Custom design of Mixed-signal ICs for Space, Military and Medical applications.
These technologies are available with full design support kits (*) including libraries and hard blocks |
| *SCMOS1/A design kit limited to Design rules documentation and device model files |
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| Application |
Process |
Description |
| Mixed analog, sensor control |
SCMOS1A |
0.8µm 5V-CMOS + Analog features ; 2P/2M |
| Microcontroller, mixed analog, sensor control, harsh environment |
SCMOS3E |
0.5µm 5V-CMOS + Analog + EPROM/OTP + High Temp ; 1-2P/2-3M |
| RFID, sensor control, power management |
SCMOS3EE |
0.5µm 5V-CMOS + Analog + EEPROM + 30/50V HV + Bipolar ; 1-2P/2-3M |
| Harsh environment space, medical digital or mixed-signal ICs |
SCMOS3RT |
0.5µm 5V-CMOS + Analog + Radiation Tolerance (up to 300krad) ; 1-2P/3M |
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