Description
B-series includes two High Speed Bipolar Mixed-Analog BiCMOS processes: a 1.0µm 12V Complementary BiCMOS (BiCMOS2SC) and a 0.8µm 20V Complementary BiCMOS (BW).
They are both high voltage single poly double metal LOCOS isolated processes suitable for RF applications.
BW is suitable for very high linearity applications too.
The B-series device portfolio includes:
 Large set of NPN and PNP bipolar transistors
NMOS and PMOS transistors
Low and High value resistors
Different type of diodes
Different type of capacitors
Please consult the individual process pages for reviewing their performances, device offering and applicative targets. |