Description
H-series includes a set of High speed Complementary Bipolar process on epitaxial silicon or SOI substrates.
These 2P/3M processes allow compact design with low noise performances. Following schematics describes the
bipolar performances per process, as well as their high voltage capabilities.
 
Click on one of the technologies to get more information
In addition to the high performance bipolar transistors, device portfolio of H-series processes includes:
 Low and high value resistors
High-value MIS capacitors
RF-MIM capacitor
Schottky diodes
Inductors and varactors
Please consult the individual process pages for reviewing their performances, device offering and applicative targets. |