Description

W-series includes a set of versatile High Speed Single Poly Linear Bipolar processes providing excellent RF functionality and power management at low cost.

These are 1.0µm single polysilicon, single or double metal LOCOS isolated, very low leakage bipolar processes optimized for compact high-speed components.

As a process choice guideline, main Bipolar transistors characteristics and High voltage capabilities are described on the schematics on the right.

In addition to high-speed NPN, and lateral PNP bipolar transistors, W-series device portfolio includes:
Low and high value resistors,
High-value MIS capacitors, nitride capacitor option
Anti-fuse diode and metal fuse for trimming
Schottky and optional Zener diodes

Please consult the process individual pages for reviewing their performances, device offering and applicative targets.